Part number:
FDS4675
Manufacturer:
Fairchild Semiconductor
File Size:
73.86 KB
Description:
40v p-channel powertrench mosfet.
* 11 A,
* 40 V RDS(ON) = 0.013 Ω @ V GS =
* 10 V RDS(ON) = 0.017 Ω @ V GS =
* 4.5 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability Applications
FDS4675
Fairchild Semiconductor
73.86 KB
40v p-channel powertrench mosfet.
📁 Related Datasheet
FDS4672A - 40V N-Channel MOSFET
(Fairchild Semiconductor)
FDS4672A
February 2007
FDS4672A
tm
40V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to .
FDS4675-F085 - 40V P-Channel MOSFET
(ON Semiconductor)
FDS4675-F085 — 40V P-ChannelTrench® MOSFET
FDS4675-F085
40V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate.
FDS4685 - 40V P-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDS4685 40V P-Channel PowerTrench® MOSFET
June 2005
FDS4685 40V P-Channel PowerTrench® MOSFET
Features
■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –1.
FDS4685 - 40V P-Channel Power MOSFET
(ON Semiconductor)
FDS4685 40V P-Channel PowerTrench® MOSFET
FDS4685
40V P-Channel PowerTrench® MOSFET
Features
■ –8.2 A, –40 V RDS(ON) = 0.027 Ω @ VGS = –10 V RDS(ON.
FDS4070N3 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS4070N3
February 2004
FDS4070N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to imp.
FDS4070N7 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS4070N7
May 2003
FDS4070N7
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve t.
FDS4072N3 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS4072N3
May 2003
FDS4072N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve t.
FDS4072N7 - N-Channel MOSFET
(Fairchild Semiconductor)
FDS4072N7
May 2003
FDS4072N7
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve t.
