FDS6930B Dual N-Channel MOSFET

Fairchild Semiconductor

Description

FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench® MOSFET .
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to min.

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Datasheet Specifications

Part number: FDS6930B
Manufacturer: Fairchild Semiconductor
File Size: 217.76 KB
Datasheet: FDS6930B_FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(ON)

Applications

* where low in-line power loss and fast switching are required. D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous

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FDS6930B Dual N-Channel MOSFET Fairchild Semiconductor

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