FQAF13N80 Datasheet - Fairchild Semiconductor

FQAF13N80 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF13N80 Features

* 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings

FQAF13N80_FairchildSemiconductor.pdf