FQAF5N90 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQAF5N90 September 2000 QFET FQAF5N90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQAF5N90
Manufacturer: Fairchild Semiconductor
File Size: 660.54 KB
Datasheet: FQAF5N90_FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 4.1A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings

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FQAF5N90 900V N-Channel MOSFET Fairchild Semiconductor

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