FQAF8N80 Datasheet (Fairchild Semiconductor)

FQAF8N80, 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQAF8N80 Features

* 5.9A, 800V, RDS(on) = 1.2Ω @VGS = 10 V

* Low gate charge ( typical 44 nC)

* Low Crss ( typical 20 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability G DS TO-3PF FQAF Series G! D !

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* ! S Absolute Maximum R