FQB27P06 60V P-Channel MOSFET

Fairchild Semiconductor

Description

FQB27P06 / FQI27P06 May 2001 QFET FQB27P06 / FQI27P06 60V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB27P06
Manufacturer: Fairchild Semiconductor
File Size: 700.35 KB
Datasheet: FQB27P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

Features

* -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

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FQB27P06 60V P-Channel MOSFET Fairchild Semiconductor

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