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FQB8N25 Datasheet - Fairchild Semiconductor

FQB8N25 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB8N25 Features

* 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB8N25_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB8N25

Manufacturer:

Fairchild Semiconductor

File Size:

593.85 KB

Description:

250v n-channel mosfet.

FQB8N25 Distributor

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FQB8N25 FQB8N25 250V N-Channel MOSFET Fairchild Semiconductor