FQB8P10 - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQB8P10
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.38 MB
Description	P-Channel MOSFET
Datasheet	FQB8P10_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-8.0 A, -100 V, RDS(on) = 530 mΩ (Max. ) @ VGS = -10 V, ID = -4.0 A.
Low Gate Charge (Typ. 12 nC).
Low Crss (Typ. 30 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage E.

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Published: Apr 1, 2005 |