FQB8P10 P-Channel MOSFET

Fairchild Semiconductor

Description

FQB8P10 * P-Channel QFET® MOSFET FQB8P10 P-Channel QFET® MOSFET -100 V, -8.0 A, 530 mΩ November 2018 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQB8P10
Manufacturer: Fairchild Semiconductor
File Size: 1.38 MB
Datasheet: FQB8P10_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -8.0 A, -100 V, RDS(on) = 530 mΩ (Max. ) @ VGS = -10 V, ID = -4.0 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating S G S D D2-PAK G D Absolute Maximum Ratings TC = 25°C unless o

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FQB8P10 P-Channel MOSFET Fairchild Semiconductor

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