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FQB8N60CF

600V N-Channel MOSFET

FQB8N60CF Features

* 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V

* Low gate charge ( typical 28nC)

* Low Crss ( typical 12pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS Compliant D October 2008 QFETTM Description These N-Channel enh

FQB8N60CF General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB8N60CF Datasheet (1.01 MB)

Preview of FQB8N60CF PDF

Datasheet Details

Part number:

FQB8N60CF

Manufacturer:

Fairchild Semiconductor

File Size:

1.01 MB

Description:

600v n-channel mosfet.

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TAGS

FQB8N60CF 600V N-Channel MOSFET Fairchild Semiconductor

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