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FQB8N60CF 600V N-Channel MOSFET

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Description

FQB8N60CF 600V N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V
* Low gate charge ( typical 28nC)
* Low Crss ( typical 12pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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