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FQB8N60CF - 600V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FQB8N60CF
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.01 MB
Description	600V N-Channel MOSFET
Datasheet	FQB8N60CF_FairchildSemiconductor.pdf

FQB8N60CF Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V.
Low gate charge ( typical 28nC).
Low Crss ( typical 12pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS Compliant D October 2008 QFETTM.

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Published: May 4, 2007 |