FQB8N60C - 600V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQB8N60C Features
* 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
* Low gate charge ( typical 28 nC)
* Low Crss ( typical 12 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC
