FQB8N60C Datasheet - Fairchild Semiconductor

FQB8N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB8N60C Features

* 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

* Low gate charge ( typical 28 nC)

* Low Crss ( typical 12 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC

FQB8N60C_FairchildSemiconductor.pdf