FQB8N90C Datasheet - Fairchild Semiconductor

FQB8N90C N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB8N90C Features

* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V

* Low Gate Charge (Typ. 35 nC)

* Low Crss (Typ. 12 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise

FQB8N90C-FairchildSemiconductor.pdf