FQB8N90C - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQB8N90C Features
* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise
