FQB8N90C N-Channel MOSFET

Fairchild Semiconductor

Description

FQB8N90C * N-Channel QFET® MOSFET FQB8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB8N90C
Manufacturer: Fairchild Semiconductor
File Size: 447.07 KB
Datasheet: FQB8N90C-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise

FQB8N90C Distributors

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FQB8N90C N-Channel MOSFET Fairchild Semiconductor

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