FQB8N90C - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQB8N90C
Manufacturer	Fairchild ↗ Semiconductor
File Size	447.07 KB
Description	N-Channel MOSFET
Datasheet	FQB8N90C-FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V.
Low Gate Charge (Typ. 35 nC).
Low Crss (Typ. 12 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1).

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Published: Jun 28, 2022 |