FQB8N90C Datasheet, Mosfet, Fairchild Semiconductor

✔ FQB8N90C Features

6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V
Low Gate Charge (Typ. 35 nC)
Low Crss (Typ. 12 pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capab

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Part number:

FQB8N90C

Manufacturer:

Fairchild Semiconductor

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447.07 KB

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📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

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FQB8N90C N-Channel MOSFET Fairchild Semiconductor