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HGTG30N60A4

N-Channel IGBT

HGTG30N60A4 Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications o

HGTG30N60A4 Datasheet (186.09 KB)

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Datasheet Details

Part number:

HGTG30N60A4

Manufacturer:

Fairchild Semiconductor

File Size:

186.09 KB

Description:

N-channel igbt.
HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device com.

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HGTG30N60A4 N-Channel IGBT Fairchild Semiconductor

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