HGTG30N60A4 Datasheet, Igbt, Fairchild Semiconductor

HGTG30N60A4 Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dr

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Part number:

HGTG30N60A4

Manufacturer:

Fairchild Semiconductor

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186.09kb

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📄 Datasheet

Description:

N-channel igbt.

HGTG30N60A4 Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGTG30N60A4

Fairchild Semiconductor

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