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HGTG30N60A4 Datasheet - Fairchild Semiconductor

HGTG30N60A4 - N-Channel IGBT

HGTG30N60A4 Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications o

HGTG30N60A4_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTG30N60A4

Manufacturer:

Fairchild Semiconductor

File Size:

186.09 KB

Description:

N-channel igbt.

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