* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications op
HGTG30N60B3 Datasheet (229.20 KB)
HGTG30N60B3
Fairchild Semiconductor
229.20 KB
N-channel igbt.
HGTG30N60B3
Data Sheet August 2003
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device combining the be.
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