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HGTG30N60B3 Datasheet - Fairchild Semiconductor

HGTG30N60B3 - N-Channel IGBT

HGTG30N60B3 Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications op

HGTG30N60B3_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTG30N60B3

Manufacturer:

Fairchild Semiconductor

File Size:

229.20 KB

Description:

N-channel igbt.

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