* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications ope
HGTG30N60C3 Datasheet (99.56 KB)
HGTG30N60C3
Intersil Corporation
99.56 KB
N-channel igbt.
HGTG30N60C3
Data Sheet January 2000 File Number 4042.2
63A, 600V, UFS Series N-Channel IGBT
The HGTG30N60C3 is a MOS gated high voltage switching dev.
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