* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG30N120CN Datasheet (81.32 KB)
HGTG30N120CN
Intersil Corporation
81.32 KB
N-channel igbt.
HGTG30N120CN
Data Sheet January 2000 File Number 4483.3
75A, 1200V, NPT Series N-Channel IGBT
The HGTG30N120CN is a Non-Punch Through (NPT) IGBT desi.
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