HGTG30N60C3D Datasheet, Igbt, Intersil Corporation

HGTG30N60C3D Features

  • Igbt of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dro

PDF File Details

Part number:

HGTG30N60C3D

Manufacturer:

Intersil Corporation

File Size:

116.92kb

Download:

📄 Datasheet

Description:

N-channel igbt.

Datasheet Preview: HGTG30N60C3D 📥 Download PDF (116.92kb)
Page 2 of HGTG30N60C3D Page 3 of HGTG30N60C3D

HGTG30N60C3D Application

  • Applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014. Features
  • 6

TAGS

HGTG30N60C3D
N-Channel
IGBT
Intersil Corporation

📁 Related Datasheet

HGTG30N60C3 - N-Channel IGBT (Intersil Corporation)
HGTG30N60C3 Data Sheet January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching dev.

HGTG30N60C3D - N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high v.

HGTG30N60C3D - N-Channel IGBT (ON Semiconductor)
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device c.

HGTG30N60 - 600V Planar IGBT Chip (Fairchild Semiconductor)
600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V HGTG30N60 Part HGTG30N60 VCES 600V ICn 60A VCE (sat) Typ 1.8 Die Size 6.6 x 6.6 mm2 See page 2.

HGTG30N60A4 - N-Channel IGBT (Fairchild Semiconductor)
HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device .

HGTG30N60A4 - N-Channel IGBT (Intersil Corporation)
HGTG30N60A4 Data Sheet January 2000 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device co.

HGTG30N60A4 - SMPS IGBT (ON Semiconductor)
IGBT - SMPS 600 V, 60 A HGTG30N60A4 Description The HGTG30N60A4 bines the best features of high input impedance of a MOSFET and the low on−state co.

HGTG30N60A4D - N-Channel IGBT (Fairchild Semiconductor)
Data Sheet HGTG30N60A4D September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volt.

HGTG30N60A4D - N-Channel IGBT (Intersil Corporation)
HGTG30N60A4D Data Sheet January 2000 File Number 4830 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS g.

HGTG30N60A4D - N-Channel IGBT (ON Semiconductor)
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices bin.

Stock and price

FLIP ELECTRONICS
IGBT 600V 63A TO-247-3
DigiKey
HGTG30N60C3D
900 In Stock
Qty : 100 units
Unit Price : $5.57
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts