Datasheet4U Logo Datasheet4U.com

HGTG30N60C3D Datasheet - Intersil Corporation

HGTG30N60C3D - N-Channel IGBT

HGTG30N60C3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in a

HGTG30N60C3D_IntersilCorporation.pdf

Preview of HGTG30N60C3D PDF
HGTG30N60C3D Datasheet Preview Page 2 HGTG30N60C3D Datasheet Preview Page 3

Datasheet Details

Part number:

HGTG30N60C3D

Manufacturer:

Intersil Corporation

File Size:

116.92 KB

Description:

N-channel igbt.

📁 Related Datasheet

📌 All Tags