of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-s
✔ HGTG30N60A4D Application
operating at high frequencies where low conduction losses are essential. This device has been optimized for
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HGTG30N60A4, Fairchild Semiconductor
HGTG30N60A4
Data Sheet August 2003 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device .
HGTG30N60A4, Intersil Corporation
HGTG30N60A4
Data Sheet January 2000 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device co.
HGTG30N60A4, ON Semiconductor
IGBT - SMPS 600 V, 60 A
HGTG30N60A4
Description The HGTG30N60A4 bines the best features of high input
impedance of a MOSFET and the low on−state co.
HGTG30N60A4D, Intersil Corporation
HGTG30N60A4D
Data Sheet January 2000 File Number 4830
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS g.
HGTG30N60A4D, ON Semiconductor
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG30N60A4D
The HGTG30N60A4D is a MOS gated high voltage switching devices bin.
HGTG30N60B3, Fairchild Semiconductor
HGTG30N60B3
Data Sheet August 2003
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device bining the be.
HGTG30N60B3, Intersil Corporation
HGTG30N60B3
Data Sheet January 2000 File Number 4444.2
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching dev.