* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in
HGTG30N60A4D Datasheet (151.75 KB)
HGTG30N60A4D
Fairchild Semiconductor
151.75 KB
N-channel igbt.
Data Sheet HGTG30N60A4D September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volt.
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