* of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applicatio
HGTG40N60C3 Datasheet (146.74 KB)
HGTG40N60C3
Fairchild Semiconductor
146.74 KB
Ufs series n-channel igbt.
HGTG40N60C3
Data Sheet December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching device combining the .
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