* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used
HGTG7N60A4D Datasheet (179.11 KB)
HGTG7N60A4D
Fairchild Semiconductor
179.11 KB
N-channel igbt.
Data Sheet
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
January 2005
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG7N60A4D,.
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