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HGTP3N60A4

N-Channel IGBT

HGTP3N60A4 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications

HGTP3N60A4 Datasheet (189.33 KB)

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Datasheet Details

Part number:

HGTP3N60A4

Manufacturer:

Fairchild Semiconductor

File Size:

189.33 KB

Description:

N-channel igbt.
HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switchi.

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HGTP3N60A4 N-Channel IGBT Fairchild Semiconductor

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