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FCPF11N60NT, FCP11N60N N-Channel MOSFET

FCPF11N60NT Description

FCP11N60N / FCPF11N60NT * N-Channel SupreMOS® MOSFET FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ November 2013 .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCPF11N60NT Features

* RDS(on) = 255 mΩ (Typ. ) @ VGS = 10 V, ID = 5.4 A
* Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 130 pF)
* 100% Avalanche Tested

FCPF11N60NT Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FCPF11N60NT, FCP11N60N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FCPF11N60NT, FCP11N60N
Manufacturer
Fairchild Semiconductor
File Size
640.50 KB
Datasheet
FCP11N60N-FairchildSemiconductor.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: FCPF11N60NT, FCP11N60N.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Fairchild Semiconductor
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