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FCPF16N60NT, FCP16N60N 600V N-Channel MOSFET

FCPF16N60NT Description

FCP16N60N / FCPF16N60NT * N-Channel SupreMOS® MOSFET FCP16N60N / FCPF16N60NT N-Channel SupreMOS® MOSFET 600 V, 16 A, 199 mΩ November 2013 F.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

FCPF16N60NT Features

* RDS(on) = 170 mΩ (Typ. ) @ VGS = 10 V, ID = 8 A
* Ultra Low Gate Charge (Typ. Qg = 40.2 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 176 pF)
* 100% Avalanche Tested

FCPF16N60NT Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FCPF16N60NT, FCP16N60N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FCPF16N60NT, FCP16N60N
Manufacturer
Fairchild Semiconductor
File Size
619.65 KB
Datasheet
FCP16N60N_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: FCPF16N60NT, FCP16N60N.
Please refer to the document for exact specifications by model.

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600V N-Channel MOSFET Fairchild Semiconductor
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