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FDB082N15A MOSFET

FDB082N15A Description

FDB082N15A * N-Channel PowerTrench® MOSFET April 2015 FDB082N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.2 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

FDB082N15A Features

* RDS(on) = 6.7 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 64.5 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDB082N15A Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies
* Micro Solar Inverter D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID ID

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