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FDD3510H Dual N&P-Channel MOSFET

FDD3510H Description

FDD3510H Dual N & P-Channel PowerTrench® MOSFET April 2008 FDD3510H Dual N & P-Channel PowerTrench® MOSFET .
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been esp.

FDD3510H Features

* Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
* Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
* 100% UIL Tested
* RoHS Compliant N-

FDD3510H Applications

* Inverter
* H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Continuous - Pulsed Power D

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Dual N &P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDD3510H-like datasheet