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FDMC510P MOSFET

FDMC510P Description

FDMC510P P-Channel PowerTrench® MOSFET FDMC510P P-Channel PowerTrench® MOSFET -20 V, -18 A, 8.0 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for rDS(ON), switching perfor.

FDMC510P Features

* Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
* Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
* Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
* Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
* High performance trench technology for extremely low r

FDMC510P Applications

* Battery Management
* Load Switch Top Bottom Pin 1 S SG S DD D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter

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