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FDP047N08 N-Channel MOSFET

FDP047N08 Description

FDP047N08 * N-Channel PowerTrench® MOSFET FDP047N08 N-Channel PowerTrench® MOSFET 75 V, 164 A, 4.7 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDP047N08 Features

* RDS(on) = 3.8 mΩ (Typ. ) @ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDP047N08 Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP047N08 VDSS VGSS ID IDM EAS dv/dt

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N-Channel MOSFET Fairchild Semiconductor
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