Datasheet Details
- Part number
- FDP054N10
- Manufacturer
- Fairchild Semiconductor
- File Size
- 784.83 KB
- Datasheet
- FDP054N10-FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP054N10 Description
FDP054N10 * N-Channel PowerTrench® MOSFET FDP054N10 N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.
FDP054N10 Features
* RDS(on) = 4.6 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low
RDS(on)
* High Power and Current Handling Capability
FDP054N10 Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS
ID
IDM EA
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