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FDS8638 - N-Channel MOSFET

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FDS8638 Product details

Description

March 2009 Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Applications Synchronous R

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Fairchild Semiconductor FDS8638-like datasheet

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