FQD10N20L N-Channel MOSFET

Fairchild Semiconductor

FQD10N20L Description

FQD10N20L * N-Channel QFET® MOSFET FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQD10N20L Features

* 7.6 A, 200 V, RDS(on) = 360 mΩ (Max. ) @ VGS = 10 V, ID = 3.8 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 14 pF)
* 100% Avalanche Tested
* Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers G S D D-PAK D G Absolute Maximu

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Datasheet Details

Part number: FQD10N20L
Manufacturer: Fairchild Semiconductor
File Size: 813.16 KB
Datasheet: FQD10N20L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Fairchild Semiconductor

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