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FQI10N20C - 200V N-Channel MOSFET

FQI10N20C Description

FQB10N20C/FQI10N20C QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI10N20C Features

* 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " !

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI10N20C-like datasheet

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