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FQI50N06 60V N-Channel MOSFET

FQI50N06 Description

FQB50N06 / FQI50N06 May 2001 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI50N06 Features

* 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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60V N-Channel MOSFET Fairchild Semiconductor
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