FQI8P10 - 100V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

📁 Related Datasheet

📌 All Tags

Fairchild Semiconductor FQI8P10-like datasheet

FQI8P10 Stock/Price