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RF1S640SM 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs

RF1S640SM Description

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po.

RF1S640SM Features

* 18A, 200V
* rDS(ON) = 0.180Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for S

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Datasheet Details

Part number
RF1S640SM
Manufacturer
Fairchild Semiconductor
File Size
132.20 KB
Datasheet
RF1S640SM_FairchildSemiconductor.pdf
Description
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs

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18A 200V 0.180 Ohm N-Channel Power MOSFETs Fairchild Semiconductor
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