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LP6836SOT343 - PACKAGED MEDIUM POWER PHEMT

LP6836SOT343 Description

PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT * .
AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications.

LP6836SOT343 Features

* 0.5 dB Noise Figure at 2 GHz
* 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
* 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
* 70% Power-Added-Efficiency

LP6836SOT343 Applications

* The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography. The LP6836’s

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PACKAGED MEDIUM POWER PHEMT Filtronic Compound Semiconductors
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