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LP6872 - 0.5W POWER PHEMT

LP6872 Description

0.5W POWER PHEMT * .
AND APPLICATIONS DIE SIZE: 14.

LP6872 Features

* 27 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 55% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) LP6872 GATE BOND PAD (2X)

LP6872 Applications

* DIE SIZE: 14.6X19.7 mils (370x500 µm) DIE THICKNESS: 3.0 mils (75 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m

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