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MRF5P20180HR6 Datasheet - Freescale Semiconductor

RF Power Field Effect Transistor

MRF5P20180HR6 Features

* 2-Carrier W-CDMA Spectrum MRF5P20180HR6 6 RF Device Data Freescale Semiconductor f = 1930 MHz Zload f = 1990 MHz f = 1990 MHz Zo = 25 Ω Zsource f = 1930 MHz VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 1930 1960 1990 Zsource Ω 6.54 - j16.04 9.70 - j17.92 13.88 - j20.46 Zload Ω 4.06 - j5.

MRF5P20180HR6 General Description

1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Part Number 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer ATC ATC .

MRF5P20180HR6 Datasheet (389.68 KB)

Preview of MRF5P20180HR6 PDF

Datasheet Details

Part number:

MRF5P20180HR6

Manufacturer:

Freescale Semiconductor

File Size:

389.68 KB

Description:

Rf power field effect transistor.
Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET.

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MRF5P20180HR6 Power Field Effect Transistor Freescale Semiconductor

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