MRF5P20180HR6 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF5P20180HR6, RF Power Field Effect Transistor

1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Part Number 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer ATC ATC

Freescale Semiconductor Technical Data MRF5P20180HR6 Rev.

0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 mA, Pout = 38 Watts Avg., Full Frequency

MRF5P20180HR6 Features

* 2-Carrier W-CDMA Spectrum MRF5P20180HR6 6 RF Device Data Freescale Semiconductor f = 1930 MHz Zload f = 1990 MHz f = 1990 MHz Zo = 25 Ω Zsource f = 1930 MHz VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 1930 1960 1990 Zsource Ω 6.54 - j16.04 9.70 - j17.92 13.88 - j20.46 Zload Ω 4.06 - j5.