MRF5P20180R6 Datasheet - Motorola

MRF5P20180R6 RF POWER FIELD EFFECT TRANSISTOR

1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Value, P/N or DWG 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer AT.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor Designed for W CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio and WLL applications. Typical 2 carrier W CDMA Performance for VDD = 28 Volts.

MRF5P20180R6 Features

* ctrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 1010 MTBF FACTOR (HOURS x AMPS 2 ) 0 2 4 6 8 10 109 108 107 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at eleva

MRF5P20180R6_Motorola.pdf