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MRF5P20180R6 RF POWER FIELD EFFECT TRANSISTOR

MRF5P20180R6 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5P20180/D The RF Sub *Micron MOSFET Line RF .
1.

MRF5P20180R6 Features

* ctrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 1010 MTBF FACTOR (HOURS x AMPS 2 ) 0 2 4 6 8 10 109 108 107 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at eleva

MRF5P20180R6 Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Typical 2
* carrier W
* CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 1955 MHz,

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Datasheet Details

Part number
MRF5P20180R6
Manufacturer
Motorola
File Size
608.66 KB
Datasheet
MRF5P20180R6_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTOR

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POWER FIELD EFFECT TRANSISTOR Motorola
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