MRF5P20180R6 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTOR

MRF5P20180R6, RF POWER FIELD EFFECT TRANSISTOR

1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 µF, 35 V Tantalum Capacitors 220 µF, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Value, P/N or DWG 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer AT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF5P20180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor Designed for W CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN PCS/cellular radio and WLL applications.

Typical 2 carrier W CDMA Performance for VDD = 28 Volts

MRF5P20180R6 Features

* ctrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 1010 MTBF FACTOR (HOURS x AMPS 2 ) 0 2 4 6 8 10 109 108 107 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at eleva