MRF5P21240R6 Datasheet (Motorola) - RF POWER FIELD EFFECT TRANSISTOR

MRF5P21240R6, RF POWER FIELD EFFECT TRANSISTOR

Short Ferrite Beads 18 pF Chip Capacitors 6.8 pF Chip Capacitors 0.1 µF Chip Capacitors 1000 pF Chip Capacitors 4.7 µF Tantalum Capacitors 10 µF Electrolytic Capacitors 22 µF Tantalum Capacitors 100 µF Electrolytic Capacitors 1.0 kW, 1/8 W Chip Resistors 10 W, 1/8 W Chip Resistors Value, P/N or DWG

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRF5P21240/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN PCS/cellular radio and WLL applications.

Typical 2 carrier W CDMA Performance for VDD = 28 Volts

MRF5P21240R6 Features

* ncy versus Output Power 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 MTBF FACTOR (HOURS x AMPS 2 ) 109 Figure 9. 2-Carrier W-CDMA Spectrum 108 107 0 2 4 6 8 10 106 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated