MRF5P21240R6 RF POWER FIELD EFFECT TRANSISTOR

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5P21240/D The RF Sub *Micron MOSFET Line RF .
Short Ferrite Beads 18 pF Chip Capacitors 6.

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Datasheet Specifications

Part number: MRF5P21240R6
Manufacturer: Motorola
File Size: 801.41 KB
Datasheet: MRF5P21240R6_Motorola.pdf
Description: RF POWER FIELD EFFECT TRANSISTOR

Features

* ncy versus Output Power 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 MTBF FACTOR (HOURS x AMPS 2 ) 109 Figure 9. 2-Carrier W-CDMA Spectrum 108 107 0 2 4 6 8 10 106 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Typical 2
* carrier W
* CDMA Performance for VDD = 28 Volts, IDQ = 2 x 1100 mA, f1 = 2135 MHz

MRF5P21240R6 Distributors

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MRF5P21240R6 POWER FIELD EFFECT TRANSISTOR Motorola

Motorola MRF5P21240R6-like datasheet