MRF5P21180 N-Channel Enhancement-Mode Lateral MOSFET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistor D.
30 pF Chip Capacitors 5.

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Datasheet Specifications

Part number: MRF5P21180
Manufacturer: Motorola
File Size: 437.94 KB
Datasheet: MRF5P21180_Motorola.pdf
Description: N-Channel Enhancement-Mode Lateral MOSFET

Features

* 10 2140 2170 Zsource Ω 5.39
* j13.89 5.66
* j13.99 5.53
* j14.51 Zload Ω 3.69
* j10.51 3.81
* j10.66 3.79
* j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
* PCS/cellular radio and WLL applications.
* Typical 2
* carrier W
* CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 MHz,

MRF5P21180 Distributors

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MRF5P21180 N-Channel Enhancement-Mode Lateral MOSFET Motorola

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