MRF5P21180 Datasheet (Motorola) - N-Channel Enhancement-Mode Lateral MOSFET

MRF5P21180, N-Channel Enhancement-Mode Lateral MOSFET

30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 µF Tantalum Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 22 µF Tantalum Capacitors 1.0 µF Tantalum Capacitors 10 W, 1/8 W Chip Resistors 1.0 kW, 1/8 W Chip Resistor Wear Blocks 5 x 180 x 500 mil Brass Shim Motorola Value, P/N or DWG 100B30

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN PCS/cellular radio and WLL applications.

Typical 2 carrier W CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 M

MRF5P21180 Features

* 10 2140 2170 Zsource Ω 5.39

* j13.89 5.66

* j13.99 5.53

* j14.51 Zload Ω 3.69

* j10.51 3.81

* j10.66 3.79

* j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from