Part number:
MRF5P21045NR1
Manufacturer:
Freescale Semiconductor
File Size:
441.87 KB
Description:
Rf power field-effect transistor n-channel enhancement-mode lateral mosfet.
MRF5P21045NR1_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF5P21045NR1
Manufacturer:
Freescale Semiconductor
File Size:
441.87 KB
Description:
Rf power field-effect transistor n-channel enhancement-mode lateral mosfet.
MRF5P21045NR1, RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
220 nF Chip Capacitor 6.8 pF Chip Capacitors 6.8 μF Chip Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 1 pF Chip Capacitors 1.5 pF Chip Capacitor 0.5 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 18125C224KAT4A ATC100B6R8BT500XT C4532X5R1H685MT EMVY630A
Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev.
0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications.
Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
MRF5P21045NR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta
📁 Related Datasheet
📌 All Tags