* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta
MRF5P21045NR1 Datasheet (441.87 KB)
MRF5P21045NR1
Freescale Semiconductor
441.87 KB
Rf power field-effect transistor n-channel enhancement-mode lateral mosfet.
Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mod.
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