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MRF5P21045NR1 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF5P21045NR1 Description

Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev.0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mod.
220 nF Chip Capacitor 6.

MRF5P21045NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta

MRF5P21045NR1 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications.
* Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 10 Watts

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Datasheet Details

Part number
MRF5P21045NR1
Manufacturer
Freescale Semiconductor
File Size
441.87 KB
Datasheet
MRF5P21045NR1_FreescaleSemiconductor.pdf
Description
RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor
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