MRF5P21045NR1 Datasheet (Freescale Semiconductor) - RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF5P21045NR1, RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

220 nF Chip Capacitor 6.8 pF Chip Capacitors 6.8 μF Chip Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 1 pF Chip Capacitors 1.5 pF Chip Capacitor 0.5 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 18125C224KAT4A ATC100B6R8BT500XT C4532X5R1H685MT EMVY630A

Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev.

0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications.

Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,

MRF5P21045NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

* RoHS Compliant

* In Ta