MRF5P21045NR1 - RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor

The MRF5P21045NR1 by Freescale Semiconductor is a RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Below is the official datasheet preview.

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MRF5P21045NR1 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF5P21045NR1** RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF5P21045NR1
Manufacturer	Freescale Semiconductor
File Size	441.87 KB
Description	RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Datasheet	MRF5P21045NR1_FreescaleSemiconductor.pdf
Additional preview pages of the MRF5P21045NR1 datasheet.

MRF5P21045NR1 Product details

Description

220 nF Chip Capacitor 6.8 pF Chip Capacitors 6.8 μF Chip Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 1 pF Chip Capacitors 1.5 pF Chip Capacitor 0.5 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 18125C224KAT4A ATC100B6R8BT500XT C4532X5R1H685MT EMVY630ATR221MKE0S ATC100B1R0BT500XT ATC100B1R5BT500XT ATC100B0R5BT500XT CRCW12061001FKTA CRCW120610R0FKTA Manufacturer AVX ATC TDK Nippon Chemi - Con ATC ATC ATC Vishay Vishay MRF5P21045NR1 RF Device Data F

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5P21045NR1 2110 - 2170 MHz, 10 W AVG. , 28 V 2 x W - CDMA, DUAL PATH.

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Published: Jul 6, 2007 |