MRF5P21045NR1 Datasheet - Freescale Semiconductor

MRF5P21045NR1 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and push - pull applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, .

MRF5P21045NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

* RoHS Compliant

* In Ta

MRF5P21045NR1_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MRF5P21045NR1

Manufacturer:

Freescale Semiconductor

File Size:

441.87 KB

Description:

Rf power field-effect transistor n-channel enhancement-mode lateral mosfet.

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MRF5P21045NR1 MRF5P21045NR1 Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor

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