MRF5S9080NBR1, MRF5S9080NR1 Datasheet (Freescale Semiconductor) - GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

MRF5S9080NBR1, MRF5S9080NR1, GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

4.7 μF Chip Capacitors (1812) 10 nF 200B Chip Capacitors 33 pF 600B Chip Capacitors 22 pF 600B Chip Capacitors 1.8 pF 600B Chip Capacitor 9.1 pF 600B Chip Capacitor 8.2 pF 600B Chip Capacitors 10 pF 600B Chip Capacitors 4.7 pF 600B Chip Capacitor 3.6 pF 600B Chip Capacitor 220 μF, 63 V Electrolytic

Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz.

Suitable for TDMA, CDMA, and multicarrier amplifier applications.

GSM Application Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).

Power Gain

MRF5S9080NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200_C Capable Plastic Package

* RoHS Compliant

* In Ta