MRF5S9070NR1 - SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Small Ferrite Bead, Surface Mount Large Ferrite Bead, Surface Mount 0.6 - 6.0 pF Variable Capacitor, Gigatrim 16 pF Chip Capacitor 7.5 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitor, Gigatrim 15 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitors 0.58 μF Chip Capacitors 18 pF Chip Capacitors 100 μ
Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev.
6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26
MRF5S9070NR1 Features
* www.DataSheet4U.com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* In Tape and Reel. R1 Suffix = 500 Units
