MRF5S9070NR1 Datasheet - Freescale Semiconductor

MRF5S9070NR1 SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

Small Ferrite Bead, Surface Mount Large Ferrite Bead, Surface Mount 0.6 - 6.0 pF Variable Capacitor, Gigatrim 16 pF Chip Capacitor 7.5 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitor, Gigatrim 15 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitors 0.58 μF Chip Capacitors 18 pF Chip Capacitors 100 μ.

Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 .

MRF5S9070NR1 Features

* www.DataSheet4U.com

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Integrated ESD Protection

* 200°C Capable Plastic Package

* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

* In Tape and Reel. R1 Suffix = 500 Units

MRF5S9070NR1 Datasheet (580.15 KB)

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Datasheet Details

Part number:

MRF5S9070NR1

Manufacturer:

Freescale Semiconductor

File Size:

580.15 KB

Description:

Single n-cdma lateral n-channel broadband rf power mosfet.

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MRF5S9070NR1 SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND POWER MOSFET Freescale Semiconductor

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