MRF5S9100NR1 - SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Ferrite Bead, Surface Mount 18 pF Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 0.8 - 8.0 pF Variable Capacitors, Gigatrim 6.2 pF Chip Capacitor 12 pF Chip Capacitors 11 pF Chip Capacitors 5.1 pF Chip Capacitors 470 mF, 63 V Electrolytic Capacitor 22 mF, 50 V Tantalum Capacitors 0.56 mF,
Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev.
5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD =
MRF5S9100NR1 Features
* www.DataSheet4U.com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix I
