MRF5S9100NR1 Datasheet - Freescale Semiconductor

MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD =.

MRF5S9100NR1 Features

* www.DataSheet4U.com

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

* N Suffix I

MRF5S9100NR1 Datasheet (554.65 KB)

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Datasheet Details

Part number:

MRF5S9100NR1

Manufacturer:

Freescale Semiconductor

File Size:

554.65 KB

Description:

Single n-cdma lateral n-channel rf power mosfets.

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MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor

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