MRF5S9100NBR1 Description
Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev.5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
Ferrite Bead, Surface Mount 18 pF Chip Capacitors 0.
MRF5S9100NBR1 Features
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* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix I
MRF5S9100NBR1 Applications
* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pou
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