Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev.
5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD =