* www.DataSheet4U.com
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix I
MRF5S9100NBR1 Datasheet (554.65 KB)
MRF5S9100NBR1
Freescale Semiconductor
554.65 KB
Single n-cdma lateral n-channel rf power mosfets.
Freescale Semiconductor Technical Data
Document Number: MRF5S9100N Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode .
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