MRF5S9150HR3 - SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Small Ferrite Bead 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 13 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 μF, 50 V Tantalum Capacitor 20K pF Chip Cap
Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz.
Suitable for multicarrier amplifier applications.
Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwi
MRF5S9150HR3 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters www.DataSheet4U.com
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gol
