MRF5S9150HR3 Datasheet - Freescale Semiconductor

MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

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Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwi.

MRF5S9150HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters www.DataSheet4U.com

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gol

MRF5S9150HR3 Datasheet (554.25 KB)

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Datasheet Details

Part number:

MRF5S9150HR3

Manufacturer:

Freescale Semiconductor

File Size:

554.25 KB

Description:

Single n-cdma lateral n-channel rf power mosfets.

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MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor

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