MRF5S9150HR3 Datasheet - Freescale Semiconductor

MRF5S9150HR3, SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
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Datasheet Details

Part number:

MRF5S9150HR3

Manufacturer:

Freescale Semiconductor

File Size:

554.25 KB

Description:

SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters www. DataSheet4U. com
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gol

Applications

* with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg. , IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 M

MRF5S9150HR3 Distributors

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MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor

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