MRF5S9101NBR1 Description
Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev.4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
4.
MRF5S9101NBR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free
MRF5S9101NBR1 Applications
* with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application
* Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE App
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