MRF5S9101NBR1 - GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
4.7 mF Chip Capacitors (2220) 10 nF 200B Chip Capacitors 33 pF 100B Chip Capacitors 22 pF 100B Chip Capacitors 10 pF 100B Chip Capacitors 8.2 pF 100B Chip Capacitors 5.6 pF 100B Chip Capacitor 4.7 pF 100B Chip Capacitor 3.9 pF 100B Chip Capacitor 220 mF, 50 V Electrolytic Capacitor, Axial 10 kW, 1/4
Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev.
4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz.
Suitable for multicarrier amplifier applications.
GSM Application Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficie
MRF5S9101NBR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free
