* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free
MRF5S9101NBR1 Datasheet (574.84 KB)
MRF5S9101NBR1
Freescale Semiconductor
574.84 KB
Gsm/gsm edge lateral n-channel rf power mosfets.
Freescale Semiconductor Technical Data
Document Number: MRF5S9101N Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode .
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