MRFG35005MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev.2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effec.
7.

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Datasheet Specifications

Part number: MRFG35005MT1
Manufacturer: Freescale Semiconductor
File Size: 149.75 KB
Datasheet: MRFG35005MT1_FreescaleSemiconductor.pdf
Description: Gallium Arsenide PHEMT RF Power Field Effect Transistor

Features

* 99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.3

Applications

* with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
* Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power

MRFG35005MT1 Distributors

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MRFG35005MT1 Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor

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