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MRFG35003N6T1 RF Power Field Effect Transistor

MRFG35003N6T1 Description

Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev.5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed .
MRFG35003N6T1 RF Device Data Freescale Semiconductor 3 C7 C6 + C11 R1 C4 C10 C9 C8 C5 C17 C16 C14 C18 + C19 C20 C21 C22 C3 C15 C12 C2 www.

MRFG35003N6T1 Features

* 0.74 - 1.67 - 2.59 - 3.50 - 4.53 - 5.52 - 6.60 - 7.76 - 8.89 - 9.98 - 11.17 - 12.37 - 13.61 |S12| 0.022 0.023 0.023 0.023 0.023

MRFG35003N6T1 Applications

* Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power
* 450 mWatts Power Gain
* 9 dB Efficienc

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Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor MRFG35003N6T1-like datasheet