Datasheet Details
Part number:
MRFG35003N6T1
Manufacturer:
Freescale Semiconductor
File Size:
158.93 KB
Description:
RF Power Field Effect Transistor
Features
* 0.74 - 1.67 - 2.59 - 3.50 - 4.53 - 5.52 - 6.60 - 7.76 - 8.89 - 9.98 - 11.17 - 12.37 - 13.61 |S12| 0.022 0.023 0.023 0.023 0.023
MRFG35003N6T1_FreescaleSemiconductor.pdf
MRFG35003N6T1, RF Power Field Effect Transistor
MRFG35003N6T1 RF Device Data Freescale Semiconductor 3 C7 C6 + C11 R1 C4 C10 C9 C8 C5 C17 C16 C14 C18 + C19 C20 C21 C22 C3 C15 C12 C2 www.DataSheet4U.com C1 C13 C23 C24 C28 C27 C26 C25 MRFG35003M6 Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with th
Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev.
5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications.
Characterized from 0.5 to 5.0 GHz.
Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power 450 mWatts Power Gain 9 dB Efficiency
MRFG35003N6T1 Distributor
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