MRFG35003N6T1 Datasheet - Freescale Semiconductor

MRFG35003N6T1 RF Power Field Effect Transistor

MRFG35003N6T1 RF Device Data Freescale Semiconductor 3 C7 C6 + C11 R1 C4 C10 C9 C8 C5 C17 C16 C14 C18 + C19 C20 C21 C22 C3 C15 C12 C2 www.DataSheet4U.com C1 C13 C23 C24 C28 C27 C26 C25 MRFG35003M6 Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with th.

Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power 450 mWatts Power Gain 9 dB Efficiency

MRFG35003N6T1 Features

* 0.74 - 1.67 - 2.59 - 3.50 - 4.53 - 5.52 - 6.60 - 7.76 - 8.89 - 9.98 - 11.17 - 12.37 - 13.61 |S12| 0.022 0.023 0.023 0.023 0.023

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Datasheet Details

Part number:

MRFG35003N6T1

Manufacturer:

Freescale Semiconductor

File Size:

158.93 KB

Description:

Rf power field effect transistor.

MRFG35003N6T1 Distributor

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MRFG35003N6T1 MRFG35003N6T1 Power Field Effect Transistor Freescale Semiconductor