* Excellent Phase Linearity and Group Delay Characteristics
* High Gain, High Efficiency and High Linearity
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, ST
MRFG35002N6AT1 Datasheet (214.84 KB)
MRFG35002N6AT1
Freescale Semiconductor
214.84 KB
Gallium arsenide phemt rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRFG35002N6A Rev. 1, 12/2008
www.DataSheet4U.com
Gallium Arsenide PHEMT
RF Power Field Effec.
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