MRFG35002N6AT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Description

MRFG35002N6A Rev.

Figure 2.

Features

Excellent Phase Linearity and Group Delay Characteristics.
High Gain, High Efficiency and High Linearity.
RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5.

Freescale Semiconductor

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Datasheet Details

Part number	MRFG35002N6AT1
Manufacturer	Freescale Semiconductor
File Size	214.84 KB
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet	MRFG35002N6AT1 Datasheet
Additional preview pages of the MRFG35002N6AT1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Drain Efficiency — 26.5% ACPR @ 5 MHz Offset — - 42 dBc in 3.84 MHz Channel Bandwidth • 1.

Published: Mar 20, 2010 |