Datasheet Details
Part number:
MRFG35002N6AT1
Manufacturer:
Freescale Semiconductor
File Size:
214.84 KB
Description:
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Features
* Excellent Phase Linearity and Group Delay Characteristics
* High Gain, High Efficiency and High Linearity
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, ST
MRFG35002N6AT1_FreescaleSemiconductor.pdf
MRFG35002N6AT1, Gallium Arsenide PHEMT RF Power Field Effect Transistor
13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 R1 C5 C6 C18 C17 C16 C14 www.DataSheet4U.com C15 C19 C20 C22 C21 C1 C2 C3 C4 C23 C24 MRFG35002N6A Rev.
3 Figure 2.
MRFG35002N6A Te
Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev.
1, 12/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84
MRFG35002N6AT1 Distributor
📁 Related Datasheet
📌 All Tags
