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MRFG35002N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35002N6T1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev.1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect.
13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7.

MRFG35002N6T1 Features

* 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85

MRFG35002N6T1 Applications

* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg. , 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5

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Datasheet Details

Part number
MRFG35002N6T1
Manufacturer
Freescale Semiconductor
File Size
235.67 KB
Datasheet
MRFG35002N6T1_FreescaleSemiconductor.pdf
Description
Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor
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