MRFG35002N6T1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Description

MRFG35002M6, Rev.

Figure 2.

Features

4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85.

Freescale Semiconductor

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Datasheet Details

Part number	MRFG35002N6T1
Manufacturer	Freescale Semiconductor
File Size	235.67 KB
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet	MRFG35002N6T1 Datasheet
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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev. 1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Drain Efficiency — 27% ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • 1.

Published: Feb 25, 2007 |