MRFG35002N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev.1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect.
13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7.

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Datasheet Specifications

Part number: MRFG35002N6T1
Manufacturer: Freescale Semiconductor
File Size: 235.67 KB
Datasheet: MRFG35002N6T1_FreescaleSemiconductor.pdf
Description: Gallium Arsenide PHEMT RF Power Field Effect Transistor

Features

* 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85

Applications

* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg. , 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5

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MRFG35002N6T1 Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor

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