* 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85
MRFG35002N6T1 Datasheet (235.67 KB)
MRFG35002N6T1
Freescale Semiconductor
235.67 KB
Gallium arsenide phemt rf power field effect transistor.
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Freescale Semiconductor Technical Data
Document Number: MRFG35002N6 Rev. 1, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect.
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