MRFG35002N6T1 Datasheet - Freescale Semiconductor

MRFG35002N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 C18 C17 C16 C15 C14 R1 C5 C6 C19 C20 C22 C21 C2 C1 C3 C4 C23 C24 MRFG35002M6, Rev. 2 3.5 GHz - 3.6 GHz Figure 2. MRFG35002N6 Test Circuit.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev. 1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.8.

MRFG35002N6T1 Features

* 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85

MRFG35002N6T1 Datasheet (235.67 KB)