Datasheet Details
Part number:
MRFG35002N6T1
Manufacturer:
Freescale Semiconductor
File Size:
235.67 KB
Description:
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Features
* 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85
MRFG35002N6T1_FreescaleSemiconductor.pdf
MRFG35002N6T1, Gallium Arsenide PHEMT RF Power Field Effect Transistor
13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 C18 C17 C16 C15 C14 R1 C5 C6 C19 C20 C22 C21 C2 C1 C3 C4 C23 C24 MRFG35002M6, Rev.
2 3.5 GHz - 3.6 GHz Figure 2.
MRFG35002N6 Test Circuit
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev.
1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.8
MRFG35002N6T1 Distributor
📁 Related Datasheet
📌 All Tags
